Building the semiconductor stack silicon cannot reach.
Titanym is a specialized semiconductor manufacturing program developing a process platform around single-crystal silicon-germanium on sapphire. Built for space, defense, RF, and advanced device markets where standard process flows fall short.
Phase 1 is underway: process reproduction and materials qualification, before device development begins.
Silicon is not the ceiling.
It is the starting point.
Single-crystal silicon-germanium grown on sapphire substrates offers a combination of material performance, process economics, and integration potential that silicon alone cannot match. Particularly for device categories where substrate behavior, thermal management, defect control, and heterogeneous integration drive value.
Titanym is not competing with TSMC or Intel on leading-edge logic. The goal is different: own a narrow, high-consequence manufacturing stack that enables device classes standard foundries are not designed to serve.
Single-crystal SiGe delivers substantially higher electron and hole mobility compared to standard silicon, enabling faster, lower-power device performance.
A mask-based deposition process reduces CMOS fabrication from 19 conventional steps to 8, eliminating photoresist, UV exposure, and most selective etching steps.
SiGe-on-sapphire growth at 450 to 500°C versus the conventional 850 to 900°C range. Less thermal load, faster cycle times, higher throughput potential.
The sapphire substrate enables SiGe electronics on one side and III-nitride device structures on the other, opening paths toward integrated compute and photonics on a single wafer.
Titanym's commercial focus is on markets where reliability, differentiated process performance, and specialized integration matter more than commodity volume.
SiGe on sapphire demonstrates strong radiation hardness, making it well-suited for satellite systems, deep-space instruments, and mission-critical payloads that cannot tolerate single-event upsets.
Near-termSiGe heterojunction bipolar transistors already power RF front-ends in 5G base stations, satellite comms, and radar. The Titanym process opens a pathway to specialized RF device manufacturing.
Near-termHarsh-environment sensing applications benefit directly from rugged substrate performance, extended operational temperature range, and process-controlled reliability.
Near-termDouble-sided sapphire structures enable LED devices on one face and solar or electronic structures on the other, creating a platform for integrated, self-powered display architectures.
Mid-termSiGe's Type II band-gap alignment enables solar cell architectures with projected efficiencies of 30 to 40%, along with thermoelectric generator applications for waste heat recovery.
Mid-termGovernment agencies, aerospace primes, and specialty hardware companies seeking non-standard semiconductor process support represent a direct co-development and process services opportunity.
Phase 2Titanym builds toward a specialized semiconductor manufacturing platform through a disciplined gate-controlled progression. Click any future phase to learn more.
Reproduce the low-temperature SiGe-on-sapphire growth process in a controlled nanofabrication environment. Characterize crystal quality, defect structure, and repeatability.
Paid feasibility projects and co-development engagements.
Paid feasibility projects, wafer development engagements, custom device prototyping, and process transfer work with government and commercial customers. This phase converts process knowledge into contracted revenue.
Low-volume specialty manufacturing for high-value customers.
Low-volume specialty manufacturing, custom runs for high-value customers, recurring process-service contracts, and application-specific device production in space, defense, and RF verticals.
Selective launch of proprietary device lines.
Selective launch of proprietary device lines in target verticals where Titanym's process advantage and customer knowledge create defensible, hard-to-copy product positions with recurring margin.
Phase 1 is strictly scoped. The objective is to determine whether the SiGe-on-sapphire process can produce repeatable, high-quality semiconductor material. No device claims are made until this gate is cleared.
Reproducing low-temperature SiGe growth at 450 to 500°C from reported process parameters in a controlled nanofabrication environment.
Single crystal confirmation, SiGe orientation alignment, and X-ray diffraction analysis of structural integrity.
Detection and mapping of crystal twin defects, dislocations, and contamination across the full wafer surface.
Curvature analysis, AFM and microscopy evaluation of surface roughness, defect counts, and thermal load performance.
Statistical analysis across multiple growth runs with clear pass/fail criteria for each measurement category.
A formal qualification report documents all measurement data, process parameters, and material characterization findings. The output is a binary determination on whether the material system is ready for Phase 2 device development.
Controlled deposition at target low-temperature parameters.
XRD, orientation alignment, defect density mapping.
Multi-run statistical analysis with documented variance.
Full measurement record and formal program determination.
Titanym's foundation is a set of interlocking manufacturing capabilities, each addressing a specific commercial and technical bottleneck in specialty semiconductor production.
A fabrication method that reduces SiGe-on-sapphire growth temperature from the conventional range down to 450 to 500°C, eliminating thermal soak requirements and reducing production time from over 4 hours to under 1 hour without sacrificing crystal quality.
A broader suite of process methods including Molten Target Sputtering, Thermally Absorptive Coating for faster heating, graded-index layer growth, and methods for thicker, denser, more crack-resistant crystal films.
Crystal orientation alignment with the sapphire substrate lattice minimizes misfit dislocation defects. Twin defect volume reduced to well under 1%. X-ray diffraction methods map defect structure across the full wafer.
A mask-based deposition process that eliminates photoresist, UV exposure, and selective etching steps. Achieves the same result in 8 steps versus the conventional 19-step process, reducing cost, cycle time, and chemical waste.
Titanym operates as a structured program under Umanah Systems Group with defined scope, gate-controlled progression, and institutional manufacturing access.
Titanym operates as a program under Umanah Systems Group. A structured technical program with defined scope, deliverables, and phase gates. Not a science project. A disciplined commercialization pathway.
Phase 1 runs within a university nanofabrication facility capable of controlled deposition, materials characterization, and full metrology. Institutional access to equipment and process expertise.
Phase 1 is strictly process reproduction and materials evaluation. Device development is not in scope until the materials determination is issued. This discipline is intentional and non-negotiable.
Whether you're a potential investor, a government or defense partner, a technical collaborator, or a customer looking for specialized semiconductor process support, we want to hear from you.
Titanym. A Umanah Systems Group Program.